PART |
Description |
Maker |
TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
K3P6C2000B-SC |
32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM 32兆位Mx16 / 1Mx32)的CMOS掩膜ROM 32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16)的CMOS掩模ROM2兆位Mx8 / 2Mx16)的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MX25L3206EZUI-12G MX25L3206EM2 |
32M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
MX25L3205A |
32M-BIT [x 1] CMOS SERIAL eLiteFlash MEMORY
|
Macronix International
|
KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
MX25L3205A MX25L3205AMI-20 |
32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
|
Macronix International
|
KM23C32000BETY KM23C32000BTY |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
MX29LV033A MX29LV033ATC-70 MX29LV033ATC-70G MX29LV |
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
ETC
|
KM23C32000C |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
MX25L3235EZNI10G MX25L3235EM2I10G MX25L3235EMI10G |
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX25U3235FZNI10G MX25U3235FM2I10G |
1.8V 32M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|